NSBC124EDXV6T5G
TRANS PREBIAS 2NPN 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC124EDXV6T5G is a dual NPN pre-biased bipolar transistor array designed for surface mounting in a SOT-563 package. This component features integrated base resistors (22kO) for simplified circuit design and reduced component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a maximum power dissipation of 500mW. The device exhibits a minimum DC current gain (hFE) of 60 at 5mA and 10V, and a saturation voltage (Vce Sat) of 250mV at 300µA and 10mA. Typical applications include digital logic, switching circuits, and amplification stages in consumer electronics and industrial control systems. This part is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-563 |
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