NSBC124EDXV6T1
TRANS 2NPN PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC124EDXV6T1 is a dual NPN pre-biased bipolar transistor featuring integrated base resistors for simplified circuit design. This surface mount component, housed in a SOT-563 package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a power dissipation of 500mW, it exhibits a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V Vce. The internal base resistors are specified as 22kOhms for both R1 and R2, contributing to a collector-emitter saturation voltage of 250mV at 300µA base current and 10mA collector current. This device is commonly utilized in applications such as digital logic level shifting, signal switching, and driver circuits within the consumer electronics and industrial automation sectors. The NSBC124EDXV6T1 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-563 |
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