NSBC123TDP6T5G
TRANS PREBIAS 2NPN 50V SOT963Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
The onsemi NSBC123TDP6T5G is a dual, pre-biased NPN bipolar transistor array designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA per transistor. With an integrated 2.2kOhm base resistor (R1), it offers simplified circuit design. The device provides a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. Saturation voltage is rated at 250mV maximum at 1mA base current and 10mA collector current. The maximum power dissipation is 339mW. It is supplied in a compact SOT-963 package on a tape and reel. This transistor array is suitable for use in various electronic systems, including consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 339mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-963 |
Request a Quote
Clients Also Buy
NSBC113EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563
NSBC114EPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563
NSVBC143TPDXV6T1G
TRANS PREBIAS NPN/PNP 50V SOT563
