NSBC123JPDXV6T5G
TRANS PREBIAS NPN/PNP 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC123JPDXV6T5G is a dual pre-biased bipolar transistor featuring one NPN and one PNP transistor in a single SOT-563 package. This device offers a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. It is designed for surface mount applications with a power dissipation rating of 500mW. Integrated base resistors include a 2.2kO for the NPN and a 47kO for the PNP configuration, simplifying circuit design. Saturation voltage is specified at 250mV at 300µA base current and 10mA collector current. The device is supplied on a tape and reel. This component finds application in various electronic circuits requiring simple switching and amplification functions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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