NSBC123JPDXV6T1
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC123JPDXV6T1 is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SOT-563 package. This dual-transistor configuration offers integrated base resistors, specifically a 2.2 kO for the NPN and a 47 kO for the PNP, simplifying circuit design and reducing component count. The device supports a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation capability of 500mW. Minimum DC current gain (hFE) is 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce(sat)) is specified at 250mV maximum for 300µA base current and 10mA collector current. This component is commonly utilized in industrial and consumer electronics applications for switching and amplification tasks where space and component efficiency are critical. The NSBC123JPDXV6T1 is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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