NSBC123JDXV6T5G
TRANS PREBIAS 2NPN 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC123JDXV6T5G is a dual pre-biased NPN bipolar transistor array. This component features a 50V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 100mA. With a maximum power dissipation of 500mW, it is housed in a compact SOT-563 surface mount package. The internal base resistors are specified as R1 = 2.2kOhms and R2 = 47kOhms, providing a typical DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce(sat)) is a maximum of 250mV at 300µA base current and 10mA collector current. This device is commonly utilized in industrial and consumer electronics applications requiring simplified transistor configurations. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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