NSBC123EPDXV6T1
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC123EPDXV6T1 is a pre-biased dual bipolar transistor array featuring one NPN and one PNP transistor. This component is housed in a SOT-563 surface mount package, offering a compact solution for miniaturized designs. Key specifications include a maximum collector-emitter voltage (Vce) of 50V and a continuous collector current (Ic) capability of 100mA. The integrated base resistors are specified at 2.2kOhms for both R1 and R2. This device exhibits a minimum DC current gain (hFE) of 8 at 5mA collector current and 10V Vce. The maximum power dissipation is 500mW. Applications for this component are found in consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 2.2kOhms |
| Supplier Device Package | SOT-563 |
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