NSBC123EDXV6T1
TRANS 2NPN PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC123EDXV6T1 is a dual NPN pre-biased bipolar transistor array designed for surface mount applications. This component, packaged in a compact SOT-563 (SOT-666) case, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features internal base resistors of 2.2kOhms (R1) and 2.2kOhms (R2), providing a minimum DC current gain (hFE) of 8 at 5mA collector current and 10V collector-emitter voltage. The maximum power dissipation is rated at 500mW, with a collector cutoff current of 500nA. This device is suitable for use in various industries, including consumer electronics and industrial automation. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 2.2kOhms |
| Supplier Device Package | SOT-563 |
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