NSBC115TDP6T5G
TRANS PREBIAS 2NPN 50V SOT963Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC115TDP6T5G is a dual NPN pre-biased bipolar transistor array designed for surface mounting in a SOT-963 package. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a power dissipation of 339mW. It includes an integrated 100kO base resistor, providing a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. The saturation voltage is specified at a maximum of 250mV at 5mA base current and 10mA collector current. This device is commonly utilized in industrial and consumer electronics applications requiring simplified digital logic and signal switching circuitry. The NSBC115TDP6T5G is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 339mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 100kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-963 |
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