NSBC114YPDXV6T5G
TRANS PREBIAS NPN/PNP 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC114YPDXV6T5G is a dual, pre-biased bipolar transistor featuring one NPN and one PNP configuration within a compact SOT-563 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is supplied in Tape & Reel (TR) packaging. The integrated base resistors are 10kOhms for the NPN and 47kOhms for the PNP, simplifying circuit design by eliminating the need for external biasing components. With a power dissipation rating of 500mW and a Vce(sat) of 250mV at 300µA/10mA, this component is suitable for various applications including logic level translation and digital circuit design. Typical industries utilizing this type of component include consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
| Grade | - |
| Qualification | - |
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