NSBC114YPDXV6T1
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC114YPDXV6T1 is a dual pre-biased bipolar transistor featuring one NPN and one PNP configuration within a SOT-563 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With integrated base resistors (R1 = 10kOhms, R2 = 47kOhms), it simplifies circuit design by eliminating the need for external biasing components. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage, and a saturation voltage (Vce Sat) of 250mV at 300µA base current and 10mA collector current. It is supplied on tape and reel, suitable for surface mount applications and finds utility in consumer electronics and industrial control systems. The maximum power dissipation is 500mW, with a collector cutoff current of 500nA.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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