NSBC114TPDXV6T1
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC114TPDXV6T1 is a dual pre-biased bipolar transistor featuring one NPN and one PNP configuration within a compact SOT-563 package. This device is designed for surface mounting and offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors (R1 = 10kOhms) simplify circuit design, providing a typical DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. With a maximum power dissipation of 500mW, this component is suitable for applications in consumer electronics and industrial control systems where space and simplified assembly are critical. The NSBC114TPDXV6T1 is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-563 |
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