NSBC114TDXV6T5G
TRANS PREBIAS 2NPN 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBC114TDXV6T5G is a dual, pre-biased NPN bipolar transistor array designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and can handle a maximum collector current of 100mA with a power dissipation of 500mW. The integrated base resistors, specified as 10kOhms for R1, simplify circuit design by providing a defined bias point. Typical DC current gain (hFE) is 160 at 5mA collector current and 10V Vce. Saturation voltage is a maximum of 250mV at 1mA base current and 10mA collector current. The device is supplied in a SOT-563 package, commonly used in portable electronics, automotive systems, and industrial control applications. The NSBC114TDXV6T5G is delivered on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-563 |
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