NSBC114EPDXV6T5G
TRANS PREBIAS NPN/PNP 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBC114EPDXV6T5G is a dual pre-biased bipolar transistor featuring one NPN and one PNP element in a compact SOT-563 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation capability of 500mW. The integrated base resistors (R1 and R2) are both specified at 10kOhms, simplifying circuit design and reducing component count. Key specifications include a minimum DC current gain (hFE) of 35 at 5mA collector current and 10V Vce, and a saturation voltage of 250mV at 300µA base current and 10mA collector current. The component is supplied on tape and reel for high-volume automated assembly. This transistor array is commonly utilized in applications such as digital logic, interface circuits, and general-purpose switching within the consumer electronics, industrial automation, and telecommunications sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-563 |
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