NSBC114EPDXV6T1
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
The onsemi NSBC114EPDXV6T1 is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor within a compact SOT-563 surface mount package. This dual pre-biased configuration simplifies circuit design by integrating base resistors, with specified values of 10kOhms for both R1 and R2. The device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Maximum power dissipation is rated at 500mW. The minimum DC current gain (hFE) is 35 at 5mA collector current and 10V collector-emitter voltage, with a Vce(sat) of 250mV at 300µA base current and 10mA collector current. Its low collector cutoff current is 500nA. This component is commonly utilized in applications such as digital logic, small-signal amplification, and switching circuits across various industrial and consumer electronics sectors. The NSBC114EPDXV6T1 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-563 |
Request a Quote
Clients Also Buy
NSBC113EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563
NSTB60BDW1T1
TRANS NPN PREBIAS/PNP SOT363
NSBA143EDXV6T1
TRANS 2PNP PREBIAS 0.5W SOT563