NSBC114EDXV6T5G
TRANS PREBIAS 2NPN 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC114EDXV6T5G is a dual pre-biased NPN bipolar transistor array. This device features integrated base resistors (R1 = 10kO, R2 = 10kO) facilitating simplified circuit design. It offers a Collector-Emitter breakdown voltage (Vce) of 50V and a maximum collector current (Ic) of 100mA. The saturation voltage (Vce Sat) is specified at 250mV at 300µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 35 at 5mA collector current and 10V collector-emitter voltage. The component has a maximum power dissipation of 500mW and a collector cutoff current (Ic) of 500nA. It is supplied in a SOT-563 surface mount package, delivered on tape and reel. This transistor array is commonly utilized in consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-563 |
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