NSBC113EPDXV6T1
TRANS PREBIAS NPN/PNP SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBC113EPDXV6T1 is a dual pre-biased bipolar transistor featuring one NPN and one PNP element within a compact SOT-563 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It incorporates integrated base resistors (R1 = 1kO, R2 = 1kO) for simplified circuit design and reduced component count. The transistor exhibits a minimum DC current gain (hFE) of 3 at 5mA collector current and 10V Vce. With a maximum power dissipation of 500mW and a Vce(sat) of 250mV at 5mA base current and 10mA collector current, it is suitable for various applications including digital logic circuits, switching circuits, and general-purpose amplification in consumer electronics and industrial control systems. It is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 1kOhms |
| Resistor - Emitter Base (R2) | 1kOhms |
| Supplier Device Package | SOT-563 |
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