NSBC113EDXV6T1
TRANS 2NPN PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBC113EDXV6T1 is a dual NPN pre-biased bipolar transistor array in a SOT-563 package. This device features integrated base resistors, simplifying circuit design and reducing component count. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 500mW. The transistor exhibits a minimum DC current gain (hFE) of 3 at 5mA collector current and 10V Vce. Saturation voltage is specified at a maximum of 250mV for a 5mA base current and 10mA collector current. The integrated base resistors are configured at 1kOhms for both R1 and R2. This component is suitable for a variety of applications including portable electronics, power management, and signal switching. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 3 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 1kOhms |
| Resistor - Emitter Base (R2) | 1kOhms |
| Supplier Device Package | SOT-563 |
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