NSBA144EDXV6T5
TRANS 2PNP PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBA144EDXV6T5 is a dual PNP pre-biased bipolar transistor array designed for surface mount applications. Featuring integrated base resistors (R1 = 47kO, R2 = 47kO), this device simplifies circuit design by eliminating external biasing components. It offers a collector-emitter breakdown voltage (Vce(max)) of 50V and a continuous collector current (Ic(max)) of 100mA, with a maximum power dissipation of 500mW. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce, and a saturation voltage (Vce(sat)) of 250mV at 300µA base current and 10mA collector current. Collector cutoff current (Ic(max)) is rated at 500nA. Encased in a compact SOT-563 package, the NSBA144EDXV6T5 is suitable for use in consumer electronics and industrial control systems where space and component count are critical. Packaging is provided in bulk.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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