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Bipolar Transistor Arrays, Pre-Biased

NSBA143ZDXV6T1

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NSBA143ZDXV6T1

TRANS 2PNP PREBIAS 0.5W SOT563

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

The onsemi NSBA143ZDXV6T1 is a dual, pre-biased PNP bipolar transistor array in a SOT-563 surface mount package. This component features a collector current of 100mA and a collector-emitter breakdown voltage of 50V. With a maximum power dissipation of 500mW, it includes integrated base resistors of 4.7kOhms (R1) and 47kOhms (R2). The Vce saturation is specified at 250mV (Max) @ 1mA, 10mA, and the DC current gain (hFE) is a minimum of 80 @ 5mA, 10V. This device is commonly utilized in industrial and consumer electronics applications requiring simplified circuit design and reduced component count for switching and amplification functions. The device is supplied on tape and reel.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max500mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 1mA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition-
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageSOT-563

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