NSBA143ZDP6T5G
TRANS PREBIAS 2PNP 50V SOT963Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBA143ZDP6T5G is a pre-biased bipolar transistor array featuring two PNP transistors in a single SOT-963 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With integrated base resistors of 4.7kOhms (R1) and 47kOhms (R2), it simplifies circuit design for various applications. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. The maximum power dissipation is rated at 408mW, and it is supplied in Tape & Reel packaging. This component is suitable for use in applications requiring simplified switching and logic functions within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 408mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-963 |
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