NSBA143TDXV6T5G
TRANS PREBIAS 2PNP 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBA143TDXV6T5G is a dual PNP pre-biased bipolar transistor housed in a SOT-563 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistor (R1) is 4.7kOhms, facilitating simplified circuit design. With a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V collector-emitter voltage, and a saturation voltage (Vce(sat)) of 250mV at 1mA base current and 10mA collector current, this device is suitable for various digital logic applications and switching circuits. The maximum power dissipation is 500mW. This transistor array is commonly employed in consumer electronics and industrial control systems. It is supplied on tape and reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-563 |
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