NSBA143TDXV6T1
TRANS 2PNP PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBA143TDXV6T1 represents a dual, pre-biased PNP bipolar transistor array designed for surface mount applications. This component is housed in a compact SOT-563 package, delivering 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. It features integrated base resistors with a typical value of 4.7kOhms, simplifying circuit design and reducing component count. With a maximum power dissipation of 500mW and a minimum DC current gain (hFE) of 160 at 5mA and 10V, the NSBA143TDXV6T1 is suitable for various digital logic and switching applications. Industries including consumer electronics and industrial automation commonly utilize this type of pre-biased transistor for level shifting and signal conditioning. The device is supplied on tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-563 |