NSBA143EDXV6T1
TRANS 2PNP PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBA143EDXV6T1 is a dual 2 PNP pre-biased bipolar transistor array. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. Each transistor within the SOT-563 package is equipped with integrated base resistors, specified at 4.7kOhms for both R1 and R2. The maximum power dissipation is 500mW. With a minimum DC current gain (hFE) of 15 at 5mA collector current and 10V Vce, and a Vce saturation of 250mV at 1mA base current and 10mA collector current, this component is suitable for applications requiring simplified biasing and low-power switching. It is commonly found in consumer electronics and industrial control systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Supplier Device Package | SOT-563 |
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