NSBA124XDXV6T1
TRANS 2PNP PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
The onsemi NSBA124XDXV6T1 is a dual PNP pre-biased bipolar transistor array designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a power dissipation rating of 500mW. Integrated base resistors include R1 at 22kOhms and R2 at 47kOhms, providing a minimum DC current gain of 80 at 5mA collector current and 10V Vce. Saturation voltage is specified at a maximum of 250mV at 1mA base current and 10mA collector current. The device is supplied in a SOT-563 package, presented on tape and reel. This component is commonly utilized in consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
Request a Quote
Clients Also Buy
NSBC113EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563
NSTB60BDW1T1
TRANS NPN PREBIAS/PNP SOT363
NSBA143EDXV6T1
TRANS 2PNP PREBIAS 0.5W SOT563