NSBA124EDXV6T5G
TRANS 2PNP PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBA124EDXV6T5G is a dual PNP pre-biased bipolar transistor array designed for surface mount applications. This component features integrated base resistors (R1 = 22kO, R2 = 22kO) facilitating simplified circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device has a power dissipation rating of 500mW and a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage is specified at 250mV at 300µA base current and 10mA collector current, with a collector cutoff current of 500nA. The NSBA124EDXV6T5G is packaged in a compact SOT-563 (SOT-666) surface mount case and supplied on tape and reel. This transistor array is commonly utilized in digital logic applications and general-purpose switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-563 |
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