NSBA124EDXV6T1
TRANS 2PNP PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBA124EDXV6T1 is a pre-biased bipolar transistor array featuring two PNP transistors. This surface mount component, housed in a SOT-563 package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a power dissipation of 500mW, it boasts a minimum DC current gain (hFE) of 60 at 5mA and 10V. The integrated base resistors are specified at 22kOhms for R1 and 22kOhms for R2, with a Vce saturation of 250mV at 300µA and 10mA. This device is suitable for applications in consumer electronics and industrial control systems. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-563 |
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