NSBA124EDP6T5G
TRANS PREBIAS 2PNP 50V SOT963Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBA124EDP6T5G is a dual, pre-biased PNP bipolar transistor array. This surface mount component is housed in a SOT-963 package and features a collector-emitter breakdown voltage of 50V. It offers a maximum collector current of 100mA and a maximum power dissipation of 408mW. The integrated base resistors are specified at 22kOhms for both R1 and R2. With a minimum DC current gain (hFE) of 60 at 5mA and 10V, this device exhibits a Vce saturation of 250mV at 300µA and 10mA. The collector cutoff current is a maximum of 500nA. This component finds application in various digital logic circuits and consumer electronics. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 408mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 22kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| Supplier Device Package | SOT-963 |
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