NSBA123JDXV6T5G
TRANS PREBIAS 2PNP 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBA123JDXV6T5G is a dual, pre-biased PNP bipolar transistor designed for surface mount applications in a SOT-563 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors are specified as 2.2kOhms (R1) and 47kOhms (R2), facilitating simplified circuit design. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce, and a saturation voltage (Vce Sat) of 250mV at 300µA base current and 10mA collector current. The collector cutoff current is a maximum of 500nA, and the device has a maximum power dissipation of 500mW. This transistor array is suitable for use in various industrial and consumer electronics applications requiring efficient signal switching and amplification. The part is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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