NSBA123JDXV6T1G
TRANS 2PNP PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBA123JDXV6T1G is a dual, pre-biased PNP bipolar transistor array in a SOT-563 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a typical DC current gain (hFE) of 80 at 5mA and 10V, with a saturation voltage of 250mV at 300µA and 10mA. Internal base resistors of 2.2kOhms (R1) and 47kOhms (R2) are integrated for simplified circuit design. With a maximum power dissipation of 500mW and a collector cutoff current of 500nA, the NSBA123JDXV6T1G is suitable for applications in consumer electronics and industrial control systems requiring simplified discrete transistor functionality. It is supplied on a Tape & Reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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