NSBA123JDP6T5G
TRANS PREBIAS 2PNP 50V SOT963Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBA123JDP6T5G is a dual, pre-biased NPN bipolar transistor array in a SOT-963 package. This device features internal base resistors (R1 = 2.2kO, R2 = 47kO), simplifying circuit design by eliminating the need for external biasing components. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The typical DC current gain (hFE) is a minimum of 80 at 5mA collector current and 10V Vce. Power dissipation is rated at 408mW. This component is suitable for applications requiring simplified logic input and switching functions in areas such as consumer electronics and industrial control systems. The NSBA123JDP6T5G is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 408mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-963 |
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