NSBA114YDXV6T1
TRANS 2PNP PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBA114YDXV6T1 is a dual PNP pre-biased bipolar transistor array packaged in a SOT-563 surface mount configuration. This device features integrated base resistors (R1 = 10 kOhms, R2 = 47 kOhms) for simplified circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor exhibits a typical saturation voltage of 250mV at 300µA base current and 10mA collector current. With a power dissipation rating of 500mW and a low collector cutoff current of 500nA, the NSBA114YDXV6T1 is suitable for applications in consumer electronics and industrial control systems requiring compact, high-performance switching and amplification. The component is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-563 |
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