NSBA114YDP6T5G
TRANS PREBIAS 2PNP 50V SOT963Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
The onsemi NSBA114YDP6T5G is a dual 2 PNP pre-biased bipolar transistor array. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a minimum DC current gain (hFE) of 80 at 5mA, 10V and a saturation voltage (Vce Sat) of 250mV at 300µA, 10mA. With an integrated base resistor (R1) of 10kOhms and an emitter base resistor (R2) of 47kOhms, it simplifies circuit design. The maximum power dissipation is 408mW. This transistor array is housed in a SOT-963 surface mount package and is supplied on a tape and reel. It is commonly utilized in industrial, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-963 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 408mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SOT-963 |
Request a Quote
Clients Also Buy
NSBC113EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563
NSTB60BDW1T1
TRANS NPN PREBIAS/PNP SOT363
NSBA143EDXV6T1
TRANS 2PNP PREBIAS 0.5W SOT563