NSBA114TDXV6T5G
TRANS PREBIAS 2PNP 50V SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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onsemi NSBA114TDXV6T5G is a dual, pre-biased PNP bipolar transistor array. This device features a breakdown voltage of 50V and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. The saturation voltage is specified at a maximum of 250mV at 1mA base current and 10mA collector current. Integrated base resistors of 10kOhms are included. The component has a maximum power dissipation of 500mW and a collector cutoff current of 500nA. It is supplied in a SOT-563 package, suitable for surface mounting. This device is commonly utilized in consumer electronics and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-563 |
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