NSBA114TDXV6T5
TRANS 2PNP PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBA114TDXV6T5 is a pre-biased bipolar transistor featuring two PNP elements in a dual configuration. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a maximum power dissipation of 500mW, it is suitable for applications requiring compact, integrated switching and amplification. The integrated base resistor is 10kOhms, simplifying external circuit design. The device's saturation voltage is specified at a maximum of 250mV at 1mA base current and 10mA collector current. Its high DC current gain (hFE) of 160 minimum at 5mA collector current and 10V Vce makes it efficient for signal conditioning. Packaged in a SOT-563 surface mount case, the NSBA114TDXV6T5 is commonly utilized in portable electronics, communication systems, and general-purpose logic interfacing.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SOT-563 |
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