NSBA114EDXV6T5G
TRANS 2PNP PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBA114EDXV6T5G is a dual PNP pre-biased bipolar transistor in a SOT-563 package. This device features integrated base resistors (10kO) for simplified circuit design, eliminating the need for external biasing components. With a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, it is suitable for general-purpose switching and amplification applications. The transistor offers a minimum DC current gain (hFE) of 35 at 5mA and 5V, and a saturation voltage (Vce(sat)) of 250mV at 300µA and 10mA. The maximum power dissipation is 500mW. This component is commonly utilized in consumer electronics, industrial control systems, and automotive applications where space-saving and simplified component count are critical. The device is supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-563 |
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