NSBA114EDXV6T5
TRANS 2PNP PREBIAS 0.5W SOT563Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSBA114EDXV6T5 is a dual PNP pre-biased bipolar transistor in a SOT-563 surface mount package. This device features integrated base resistors, offering a typical R1/R2 ratio of 10 kOhms / 10 kOhms, simplifying circuit design and reducing component count. It operates with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 35 at 5mA and 10V, with a saturation voltage (Vce) of 250mV at 300µA and 10mA. Its maximum power dissipation is 500mW. This component is commonly employed in applications requiring signal switching and amplification within the consumer electronics and industrial automation sectors. The device is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SOT-563 |
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