NSB4904DW1T1G
TRANS PREBIAS 1NPN 1PNP 50V SC88Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSB4904DW1T1G is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SC-88/SC70-6/SOT-363 package. This dual transistor configuration provides an integrated solution for common switching and amplification applications, simplifying board layout and component count. Each transistor offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. The device includes internal base resistors, specified as 47kOhms for R1 and 47kOhms for R2, facilitating immediate operation without external biasing components. Minimum DC current gain (hFE) is 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. The maximum power dissipation is 250mW. This component is commonly utilized in industrial automation, consumer electronics, and telecommunications equipment. The NSB4904DW1T1G is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
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