NSB1706DMW5T1
TRANS 2NPN PREBIAS 0.25W SC70Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi NSB1706DMW5T1 is a dual NPN pre-biased bipolar transistor in an SC-88A (SC-70-5/SOT-353) surface mount package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a maximum power dissipation of 250mW, it includes integrated base resistors of 4.7kOhms (R1) and 47kOhms (R2). The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage is specified as 250mV at 1mA base current and 10mA collector current. This device is commonly utilized in applications such as digital logic, signal switching, and general-purpose amplification within the consumer electronics and industrial automation sectors. The component is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-TSSOP, SC-70-5, SOT-353 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SC-88A (SC-70-5/SOT-353) |
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