NSB13211DW6T1G
TRANS NPN/PNP PREBIAS 0.23W SC88Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
Quality Control: Learn More
The onsemi NSB13211DW6T1G is a dual pre-biased bipolar transistor featuring one NPN and one PNP element within a single SC-88/SC70-6/SOT-363 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is rated for 230mW of power dissipation. The integrated base resistors include values of 4.7kOhms and 10kOhms for both transistors, enabling simplified circuit design. DC current gain (hFE) is specified as a minimum of 35 at 5mA/10V for the NPN and 15 at 5mA/10V for the PNP. Saturation voltage (Vce) is a maximum of 250mV at 300µA/10mA (NPN) and 1mA/10mA (PNP). This component is commonly utilized in industrial and consumer electronics applications requiring simplified logic or signal switching. It is supplied on a tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 230mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA / 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V / 15 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms, 10kOhms |
| Resistor - Emitter Base (R2) | 4.7kOhms, 10kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
Request a Quote
Clients Also Buy
NSBC113EPDXV6T1G
TRANS PREBIAS NPN/PNP SOT563
NSTB60BDW1T1
TRANS NPN PREBIAS/PNP SOT363
SMUN5311DW1T3G
TRANS NPN/PNP PREBIAS SOT363
