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MUN5335DW1T2

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MUN5335DW1T2

TRANS BRT NPN/PNP 50V SOT363

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

The onsemi MUN5335DW1T2 is a dual, pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SC-88/SC70-6/SOT-363 package. This surface-mount component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It includes integrated base resistors, with R1 at 2.2kOhms and R2 at 47kOhms, simplifying circuit design for applications requiring low-power switching and signal amplification. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V collector-emitter voltage. This component is commonly utilized in consumer electronics, industrial control systems, and automotive applications where space and component count reduction are critical.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max-
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition-
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageSC-88/SC70-6/SOT-363
Grade-
Qualification-

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