MUN5333DW1T1
TRANS PREBIAS NPN/PNP SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi MUN5333DW1T1 is a pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SOT-363 package. This dual transistor configuration offers integrated base resistors (4.7kO for the NPN and 47kO for the PNP) simplifying circuit design and reducing component count. It supports a collector current (Ic) up to 100mA and a collector-emitter breakdown voltage (Vce(BR)CEO) of 50V. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. With a maximum power dissipation of 250mW and a Vce(sat) of 250mV at 1mA base and 10mA collector current, it is suitable for applications requiring simplified logic input circuitry and signal conditioning. This component is commonly utilized in consumer electronics and industrial control systems. The MUN5333DW1T1 is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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