MUN5316DW1T1
TRANS PREBIAS NPN/PNP SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi MUN5316DW1T1 is a pre-biased bipolar transistor featuring a dual NPN and PNP configuration in a SOT-363 package. This device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is designed with integrated base resistors (4.7kOhms for the NPN) simplifying circuit design and reducing component count. The transistor exhibits a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. With a maximum power dissipation of 250mW, it is suitable for surface mount applications. The MUN5316DW1T1 is commonly utilized in consumer electronics and industrial control applications where simplified logic interfacing and signal conditioning are required. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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