MUN5315DW1T1
TRANS PREBIAS NPN/PNP SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi MUN5315DW1T1 is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor. This device is designed for surface mounting within the SC-88/SC70-6/SOT-363 package. It offers a collector current (Ic) of up to 100mA and a collector-emitter breakdown voltage (Vce) of 50V. The transistor exhibits a minimum DC current gain (hFE) of 160 at 5mA collector current and 10V Vce. A built-in 10kOhm resistor is integrated for the base. The device has a maximum power dissipation of 250mW. This component is typically utilized in applications requiring simplified biasing and signal switching, often found in consumer electronics and industrial control systems. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | - |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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