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MUN5314DW1T1

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MUN5314DW1T1

TRANS BRT DUAL 100MA 50V SOT-363

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

The onsemi MUN5314DW1T1 is a dual pre-biased bipolar transistor array featuring one NPN and one PNP transistor in a single SOT-363 package. This device is designed for surface mount applications and offers a collector current capability of up to 100mA. Key specifications include a collector-emitter breakdown voltage of 50V and a maximum power dissipation of 385mW. The integrated base resistors are 10kOhms for the NPN and 47kOhms for the PNP, simplifying circuit design. It exhibits a minimum DC current gain (hFE) of 80 at 5mA, 10V, and a saturation voltage of 250mV at 300µA, 10mA. This component is commonly utilized in applications such as digital logic interfaces, switching circuits, and signal conditioning across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max385mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition-
Resistor - Base (R1)10kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageSC-88/SC70-6/SOT-363
Grade-
Qualification-

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