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MUN5312DW1T1

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MUN5312DW1T1

TRANS PREBIAS NPN/PNP SOT363

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays, Pre-Biased

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The onsemi MUN5312DW1T1 is a pre-biased bipolar transistor array featuring complementary NPN and PNP transistors within a single SC-88/SC70-6/SOT-363 package. This dual transistor configuration simplifies circuit design by integrating base resistors, specified at 22kOhms for both R1 (NPN base to collector) and R2 (PNP base to emitter). The device offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 250mW. It exhibits a minimum DC current gain (hFE) of 60 at 5mA collector current and 10V Vce. Saturation voltage is specified at a maximum of 250mV at 300µA base current and 10mA collector current. The MUN5312DW1T1 is commonly employed in applications requiring simplified logic level shifting and signal amplification, finding use in consumer electronics and industrial control systems. It is supplied in a Tape & Reel (TR) package for automated assembly.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Frequency - Transition-
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
Supplier Device PackageSC-88/SC70-6/SOT-363
Grade-
Qualification-

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