MUN5311DW1T1
TRANS BRT DUAL 100MA 50V SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi MUN5311DW1T1 is a dual pre-biased bipolar transistor featuring one NPN and one PNP configuration within a single SOT-363 package. This component is designed for surface mounting and offers a collector current capability of up to 100mA with a collector-emitter breakdown voltage of 50V. Each transistor includes integrated base resistors of 10kOhms, simplifying circuit design and reducing component count. The device exhibits a minimum DC current gain (hFE) of 35 at 5mA collector current and 10V Vce. Saturation voltage is specified at a maximum of 250mV at 300µA base current and 10mA collector current. This component is suitable for applications in consumer electronics and industrial control systems where simplified signal conditioning and switching are required. The MUN5311DW1T1 is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 385mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 10kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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