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MUN5237DW1T1

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MUN5237DW1T1

TRANS 2NPN PREBIAS 0.25W SOT363

Manufacturer: onsemi

Categories: Bipolar Transistor Arrays, Pre-Biased

Quality Control: Learn More

The onsemi MUN5237DW1T1 is a dual, pre-biased NPN bipolar transistor array designed for surface mount applications. This component features two independently packaged NPN transistors, each with integrated base resistors (R1 = 47kOhms, R2 = 22kOhms) for simplified circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation rating of 250mW. The device exhibits a minimum DC current gain (hFE) of 80 at 5mA, 10V and a saturation voltage (Vce) of 250mV at 5mA, 10mA. The SC-88/SC70-6/SOT-363 package is supplied on tape and reel. This transistor array is commonly utilized in industrial automation, consumer electronics, and telecommunications equipment.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 NPN - Pre-Biased (Dual)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Frequency - Transition-
Resistor - Base (R1)47kOhms
Resistor - Emitter Base (R2)22kOhms
Supplier Device PackageSC-88/SC70-6/SOT-363
Grade-
Qualification-

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