MUN5236DW1T1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi MUN5236DW1T1 is a dual NPN pre-biased bipolar transistor in a SOT-363 package, designed for surface mounting. This component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a maximum power dissipation of 250mW. Key specifications include a minimum DC current gain (hFE) of 80 at 5mA, 10V, and a saturation voltage (Vce Sat) of 250mV at 300µA, 10mA. It features integrated base resistors of 100kOhms (R1) and 100kOhms (R2). The device is supplied on a tape and reel (TR) for efficient manufacturing processes and finds application in various consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 100kOhms |
| Resistor - Emitter Base (R2) | 100kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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