MUN5235DW1T1
TRANS 2NPN PREBIAS 0.25W SOT363Manufacturer: onsemi
Categories: Bipolar Transistor Arrays, Pre-Biased
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The onsemi MUN5235DW1T1 is a dual 2 NPN pre-biased bipolar transistor packaged in an SC-88/SC70-6/SOT-363 surface mount configuration. This device features integrated base resistors, with R1 specified at 2.2kOhms and R2 at 47kOhms, simplifying circuit design and reducing component count. It offers a collector current (Ic) of up to 100mA and a maximum power dissipation of 250mW. The collector-emitter breakdown voltage (Vce) is rated at 50V, with a saturation voltage (Vce Sat) of 250mV at 300µA base current and 10mA collector current. The DC current gain (hFE) is a minimum of 80 at 5mA collector current and 10V Vce. This component is commonly utilized in applications within the consumer electronics and industrial automation sectors. The MUN5235DW1T1 is supplied on tape and reel.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Frequency - Transition | - |
| Resistor - Base (R1) | 2.2kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Grade | - |
| Qualification | - |
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